Complementary Enhancement Mode Field Effect Transistor

General Description The AO6605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6605 is Pb-free (meets ROHS & Sony 259 specifications). AO

PHASE SHIFTER DC TO 18, 26.5 GHZ, COAXIAL

FEATURES • Type SMA Connectors Standard • Options from DC to 18 GHz • High Performance, Troughline Style Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

AC Film Capacitors Lighting

Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

DC TO 18, 26.5 GHz, COAXIAL

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Noise of Sources

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Noise of Sources

文件：703.59 Kbytes Page：5 Pages