Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800E uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

MOSFET：Dual-Channel

BiMOS II LATCHED DRIVERS

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

General Purpose Oscilloscope Probes

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Instrument Knobs

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WiFi /Active GNSS Direct Mount Antenna

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