场效应管MOSFET

40V Dual N-Channel MOSFET

General Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS 40V ID

Dual N-Channel MOSFET

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SOP-8 Plastic-Encapsulate MOSFETS

Description The 4884 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

Monolithic Crystal Filter

文件：455.93 Kbytes Page：3 Pages

N-Channel Enhancement Mode MOSFET

文件：455.86 Kbytes Page：7 Pages