Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirection

丝印代码：4801；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -5 A (VGS = -10V) ● RDS(ON)

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

P沟道MOSFET (8V - 60V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。

30V P+P MOSFET

30V Dual P-ch Fast Switching MOSFET

30V P-Channel MOSFET

文件：279.66 Kbytes Page：5 Pages

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4801A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free (meets ROHS & Sony 259 specifications) Features VDS (V) = -30V

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

丝印代码：4801A；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -5 A (VGS = -10V) ● RDS(ON)

30V Dual P-Channel MOSFET

General Description The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID (at VGS=-10V

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested ​​​​​​​ APPLICATIONS • Load Switches

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirection

30V P-Channel MOSFET

文件：279.66 Kbytes Page：5 Pages

30V P-Channel MOSFET

文件：279.74 Kbytes Page：5 Pages

30V P-Channel MOSFET

文件：279.74 Kbytes Page：5 Pages

包装：托盘 描述：MOSFET 2P-CH 30V 5A 8SOIC 分立半导体产品 晶体管 - FET，MOSFET - 阵列

包装：托盘 描述：MOSFET 2P-CH 30V 5A 8SOIC 分立半导体产品 晶体管 - FET，MOSFET - 阵列

Headphone Stereo Power Amplifier

Overview The LA4801V is a headphone stereo power amplifier for portable CD and MD players. It features a high signal-to-noise ratio, a high ripple rejection ratio, low distortion, and low current drain. Features • High signal-to-noise ratio (96 dB typical at 7 µV) • High ripple rejection ratio

Headphone Stereo Power Amplifier

Overview The LA4801V is a headphone stereo power amplifier for portable CD and MD players. It features a high signal-to-noise ratio, a high ripple rejection ratio, low distortion, and low current drain. Features • High signal-to-noise ratio (96 dB typical at 7 µV) • High ripple rejection ratio

Low-Voltage HSTL Differential Clock

General Description The LCK4801 is a low-voltage, 3.3 V HSTL differential clock synthesizer. The LCK4801 supports two differential HSTL output pairs with frequencies from 336 MHz to 1 GHz. The clock is designed to support single and multiple processor systems that require HSTL differential inputs

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● Fast response and high-speed modulation capability : fC = 20 MHz (typ.) ● Wide directivity : θ = 22 deg. (typ.) ● Transparent epoxy resin package

0.4 inch ( 10.0 mm ) SINGLE DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVS-4301/4801 is 0.4 inch (10.0mm) height single digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. All devices displays have gray face and white segments. The bright red and green LED chip are made from GaP on a transparent Ga