Complementary Enhancement Mode Field Effect Transistor

General Description The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AO4614B and AO4614BL are electrically identical. ​​​​​​​ -RoHS Compliant -AO4614BL is

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Application | « Reverse Battery protection ~~ « Load switch | « Power management « Motor Control | « Portable Power Adaptors |

40V Dual P N-Channel MOSFET

文件：238.9 Kbytes Page：7 Pages

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AO4614B and AO4614BL are electrically identical. ​​​​​​​ -RoHS Compliant -AO4614BL is

40V Dual P N-Channel MOSFET

文件：238.9 Kbytes Page：7 Pages

Mounting Base, Triple Banana Jack and Binding Post, Miniature

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40V Dual P N-Channel MOSFET

文件：238.9 Kbytes Page：7 Pages

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

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Networks

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Networks

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