Complementary Enhancement Mode Field Effect Transistor

General Description The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AO4614B and AO4614BL are electrically identical. ​​​​​​​ -RoHS Compliant -AO4614BL is

LEADLESS PACKAGE FOR SURFACE MOUNT

• 1N4614UR-1 THRU 1N4627UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED

500mW LOW NOISE ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4614 Series Silicon Zener Diode is a high quality voltage regulator designed for low leakage, low current and low noise applications

500mW LOW NOISE ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4614 Series Silicon Zener Diode is a high quality voltage regulator designed for low leakage, low current and low noise applications.

350mW LOW NOISE ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4614 Series types are high quality silicon zener diodes designed for low leakage, low current and low noise applications.

Bipolar Integrated Circuit with Photodetection Function

Bipolar Integrated Circuit with Photodetection Function For infrared remote control systems Features High sensitivity (extension distance is 11 m or more) External parts not required Resin to cutoff visible light is used Supports various metal holders with improved electromagne