P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON)

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -5.1A RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Complimentary (PNP) device:2N4403 • Pb free product are available :99 Sn above can meet RoHS environment substance directive

DO-41 Case

General Purpose Transistors

General Purpose Transistors NPN Silicon

NPN General Purpose Amplifier

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TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

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