100V N-Channel MOSFET

Product Summary VDS 100V ID (at VGS=10V) 1A RDS(ON) (at VGS=10V)

100V N-Channel MOSFET

General Description The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summ

MOS（场效应管）

짹15kV ESD-Protected, 짹60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers

General Description The MAX3440E–MAX3444E fault-protected RS-485 and J1708 transceivers feature ±60V protection from signal faults on communication bus lines. Each device contains one differential line driver with three-state output and one differential line receiver with three-state input. The 1

짹15kV ESD-Protected, 짹60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers

General Description The MAX3440E–MAX3444E fault-protected RS-485 and J1708 transceivers feature ±60V protection from signal faults on communication bus lines. Each device contains one differential line driver with three-state output and one differential line receiver with three-state input. The 1

짹15kV ESD-Protected, 짹60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers

General Description The MAX3440E–MAX3444E fault-protected RS-485 and J1708 transceivers feature ±60V protection from signal faults on communication bus lines. Each device contains one differential line driver with three-state output and one differential line receiver with three-state input. The 1

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low