P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3423 is Pb-free (meets ROH

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-2.0 A (VGS =-10V) ● RDS(ON)

丝印代码：AS；SMD Type

■ Features ● VDS (V) =-20V ● ID =-2.0 A (VGS =-10V) ● RDS(ON)

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel Enhancement MOSFET

Features VDS (V) =-20V ID =-2.0 A (VGS =-10V) RDS(ON)

SOT23-3L Plastic-Encapsulate MOSFET (P Channel)

-20V/-3.0A P Channel Advanced Power MOSFET

-20V P-Channel MOSFET

20V P-Channel MOSFET

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SOT-23-3L Plastic-Encapsulate MOSFETS

FEATURE ※ TrenchFET Power MOSFET ※ ESD Protected 2.0KV

P-Channel MOSFET

Features ● VDS (V) = -20V ● RDS(ON) ≤ 100m@ (VGS = -4.5V) ● RDS(ON) ≤ 150m@ (VGS = -2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

丝印代码：AS***；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3423 is Pb-free (meets ROH

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：MOSFET P-CH 20V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

20V P-Channel MOSFET

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P-Channel Enhancement MOSFET

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P-Channel MOSFET

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丝印代码：AS***；20V P-Channel MOSFET

文件：288.52 Kbytes Page：5 Pages

Double cassette tape recorder system preamplifier

Double cassette tape recorder system preamplifier The BA3423S is a record /playback system preamplifier for radio cassette decks. With four control pins it allows switch ing between I/O for the A (play only) and B (record and play) mechanisms, input for tape, radio, and microphone, on and off

TRIPLE DIFFUSED PNP TRANSISTOR(AUDIO FREQUENCY AMPLIFIER)

AUDIO FREQUENCY AMPLIFIER APPLICATION. FEATURES • High Breakdown Voltage : VCEO=150V(Min.). • Low Output Capacitance : Cob=5.0pF(Max.). • High Transition Frequency : fT=120MHz(Typ.). • Complementary to KTA1360.

OVERVOLTAGE SENSING CIRCUIT

This overvoltage protection circuit (OVP) protects sensitive electronic circuitry from overvoltage transients or regulator failures when used in conjunction with an external “crowbar” SCR. The device senses the overvoltage condition and quickly “crowbars” or short circuits the supply, forcing the

OVERVOLTAGE SENSING CIRCUIT

This overvoltage protection circuit (OVP) protects sensitive electronic circuitry from overvoltage transients or regulator failures when used in conjunction with an external “crowbar” SCR. The device senses the overvoltage condition and quickly “crowbars” or short circuits the supply, forcing the

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor in a 3 mm diameter, lensed plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE33xxLA series of IREDs.