N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 6 A (VGS = 10V) ● RDS(ON)

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON)

N- CHANNEL MOSFET in a SOT-23 Plastic Package

20V N MOSFET

20V/6A N Channel Advanced Power MOSFET

20V N-Channel MOSFET

文件：233.93 Kbytes Page：5 Pages

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 6 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product

20V N-Channel MOSFET

文件：233.93 Kbytes Page：5 Pages

N-Channel MOSFET

文件：1.86054 Mbytes Page：4 Pages

N-Channel MOSFET

文件：2.02884 Mbytes Page：4 Pages

包装：卷带（TR） 描述：MOSFET N-CH 20V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel 250-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages

Ultralow Noise, High Accuracy

文件：993.6 Kbytes Page：32 Pages

Micropower, High Accuracy Voltage References

文件：900.95 Kbytes Page：24 Pages