N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product

包装：卷带（TR） 描述：MOSFET N-CH 20V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel 250-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages

Ultralow Noise, High Accuracy

文件：993.6 Kbytes Page：32 Pages

Micropower, High Accuracy Voltage References

文件：900.95 Kbytes Page：24 Pages