丝印代码：A7***；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V) = -30V ID= -4.1 A RDS(ON)

30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A

P-Channel Enhancement MOSFET

Features ● VDS (V) = -30V ● ID = -4.1 A ● RDS(ON) 52m (VGS = -10V) ● RDS(ON) 87m (VGS = -4.5V)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V) = -30V I D = -4.1 A RDS(ON)

Plastic-Encapsulate Mosfets

P-Channel MOSFET FEATURES • The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

P- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions P- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = -30V ID = -4.1 A RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

丝印代码：3407；P-Channel 20-V(D-S) MOSFET

Product Summary VDs= -30V, ID= -4.1A RDS(ON)

MOSFET

场效应管

P-Channel 20-V(D-S)MOSFET

丝印代码：A7***；30V P-Channel MOSFET

文件：453.5 Kbytes Page：5 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.3 A (VGS =-10V) ● RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407A/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3407A and AO3407AL are electrically identical. -RoHS Compliant -AO3407AL is Halogen Free Features

丝印代码：X7HV；P-Channel Enhancement MOSFET

Features VDS (V) = -30V ID = -4.2 A RDS(ON)

P-Channel Enhancement MOSFET

Features VDS (V) = -30V ID = -4.1 A RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.3 A (VGS =-10V) ● RDS(ON)

P-Channel MOSFET

Features ● VDS (V) = -30V ● ID = -4.1 A ● RDS(ON) 52m (VGS = -10V) ● RDS(ON) 87m (VGS = -4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

30V P-Channel MOSFET

文件：453.5 Kbytes Page：5 Pages

P-Channel Enhancement MOSFET

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30V P-Channel MOSFET

文件：489.85 Kbytes Page：5 Pages

30V P-Channel MOSFET

文件：489.85 Kbytes Page：5 Pages

P-Channel MOSFET

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P-Channel MOSFET

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P-Channel MOSFET

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P-Channel Enhancement MOSFET

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Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

Low Cost Triple CRT Driver

CRT Driver Amplifiers The Calogic Video Family

75??100??120??Switchable Termination Networks

General Description The MAX3406/MAX3407/MAX3408 are general-purpose line-terminating networks designed to change the termination value of a line, depending on the state of a digital control line, allowing the connection to a coaxial cable or a twisted pair wire. These devices are switchable betwe

75??100??120??Switchable Termination Networks

General Description The MAX3406/MAX3407/MAX3408 are general-purpose line-terminating networks designed to change the termination value of a line, depending on the state of a digital control line, allowing the connection to a coaxial cable or a twisted pair wire. These devices are switchable betwe