clamping protection mode

文件：438.61 Kbytes Page：17 Pages

AM/FM TUNER FIELD TEST PROCEDURE

文件：1.04973 Mbytes Page：12 Pages

AM/FM TUNER FIELD TEST PROCEDURE

Using the STGW35HF60WD advanced PT IGBT in parallel

文件：761.42 Kbytes Page：14 Pages

Configuring your ISO 15693 reader

文件：232.63 Kbytes Page：13 Pages

Configuring your ISO 15693 reader

Digital PFC and dual FOC MC integration

文件：1.14873 Mbytes Page：31 Pages

In alternating current applications

In alternating current applications

文件：321.65 Kbytes Page：20 Pages

Technology performance comparison of Triacs subjected to fast transient voltages

文件：175.31 Kbytes Page：12 Pages

High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

文件：32.159 Kbytes Page：1 Pages