N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. AM9926 is available in SOP8 package. FEATURES  VDS=20V, ID=6A RDS(ON)

SOP8雙MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. AM9926 is available in SOP8 package. FEATURES  VDS=20V, ID=6A RDS(ON)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. AM9926 is available in SOP8 package. FEATURES  VDS=20V, ID=6A RDS(ON)

N-Channel 20-V (D-S) MOSFET

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MOSFET

Dual N-Channel 20-V (D-S) MOSFET

文件：981.81 Kbytes Page：7 Pages

Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

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6A竊?0V Dual N-CHANNEL MOSFET

文件：124.3 Kbytes Page：4 Pages

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages