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型号	功能描述	生产厂家企业	LOGO
AM60	消音器	Ruskin	Ruskin
AM6008	丝印代码：AM6008；N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6008 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHS and Halogen free com	AXELITE 亚瑟莱特	AXELITE
AM6008	丝印代码：AM6008；N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6008 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectif ication for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHs and Halogen-Free Co	AXELITE 亚瑟莱特	AXELITE
AM6011	丝印代码：AM6011；N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6011 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHs and Halogen-Free Com	AXELITE 亚瑟莱特	AXELITE
AM6012	丝印代码：AM6012；N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6012 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low R DS(ON) - Low Gate Charge - RoHs and Halogen-Free Co	AXELITE 亚瑟莱特	AXELITE
AM6008P8C	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6008 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHS and Halogen free com	AXELITE 亚瑟莱特	AXELITE
AM6008P8C	MOSFET The	AXELITE 亚瑟莱特	AXELITE
AM6008P8CA	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6008 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHS and Halogen free com	AXELITE 亚瑟莱特	AXELITE
AM6008S	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6008 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectif ication for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHs and Halogen-Free Co	AXELITE 亚瑟莱特	AXELITE
AM6008SA	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6008 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectif ication for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHs and Halogen-Free Co	AXELITE 亚瑟莱特	AXELITE
AM6011P8C	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6011 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHs and Halogen-Free Com	AXELITE 亚瑟莱特	AXELITE
AM6011P8CA	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6011 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low RDS(ON) - Low Gate Charge - RoHs and Halogen-Free Com	AXELITE 亚瑟莱特	AXELITE
AM6012	12-Bit multiplying D/A converter DESCRIPTION The AM6012 12-bit multiplying Digital-to-Analog converter provides high-speed and 0.025 differential nonlinearity over its full commercial temperature range. The D/A converter uses a 3-bit segment generator for the MSBs in conjunction with a 9-bit R-2R diffused resistor ladder to pro	PHILIPS 飞利浦	PHILIPS
AM6012D	12-Bit multiplying D/A converter DESCRIPTION The AM6012 12-bit multiplying Digital-to-Analog converter provides high-speed and 0.025 differential nonlinearity over its full commercial temperature range. The D/A converter uses a 3-bit segment generator for the MSBs in conjunction with a 9-bit R-2R diffused resistor ladder to pro	PHILIPS 飞利浦	PHILIPS
AM6012F	12-Bit multiplying D/A converter DESCRIPTION The AM6012 12-bit multiplying Digital-to-Analog converter provides high-speed and 0.025 differential nonlinearity over its full commercial temperature range. The D/A converter uses a 3-bit segment generator for the MSBs in conjunction with a 9-bit R-2R diffused resistor ladder to pro	PHILIPS 飞利浦	PHILIPS
AM6012S	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6012 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low R DS(ON) - Low Gate Charge - RoHs and Halogen-Free Co	AXELITE 亚瑟莱特	AXELITE
AM6012SA	N-Ch 100V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM6012 is the high cell density trenched N ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.  FEATURES - 100% EAS Guaranteed - Low R DS(ON) - Low Gate Charge - RoHs and Halogen-Free Co	AXELITE 亚瑟莱特	AXELITE
AM60N04	40V, 60A N-CH FAST SWITCHING MOSFETS DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet	AITSEMI 创瑞科技	AITSEMI
AM60N04PJ8SR	40V, 60A N-CH FAST SWITCHING MOSFETS DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet	AITSEMI 创瑞科技	AITSEMI
AM60N04PJ8SVR	40V, 60A N-CH FAST SWITCHING MOSFETS DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet	AITSEMI 创瑞科技	AITSEMI
AM60N10-11D	N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed	ANALOGPOWER	ANALOGPOWER
AM60N10-15D	N-Channel 100-V (D-S) MOSFET Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed	ANALOGPOWER	ANALOGPOWER
AM60N12-10D	N-Channel 120-V (D-S) MOSFET Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed	ANALOGPOWER	ANALOGPOWER
AM60N25-33FP	N-Channel 250-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed	ANALOGPOWER	ANALOGPOWER
AM60R380F	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FDR	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FDVR	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FS3R	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FS3VR	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FT3FU	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FT3FVU	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FT3U	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FT3VU	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FTS3U	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM60R380FTS3VU	MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION VDS@ TJ.max =650V V GS 30 V ID(A)= 11 A R DS(ON) 0.32Ω Typ ..) @ V GS =10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages. FEATURES ⚫ F ast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F	AITSEMI 创瑞科技	AITSEMI
AM600	600A AC Analog Clamp Meter 文件：600.87 Kbytes Page：8 Pages	EXTECH	EXTECH
AM600/F-PCN21A-110PA-P	包装：散装描述：TOOL ACCY 工具压接器，压接机，压力机 - 配件	ETC 知名厂家	ETC
AM6000-12000IS128	封装/外壳：模块，SMA 连接器包装：袋描述：6000-12000 MHZ ISOLATOR RF/IF，射频/中频和 RFID 射频环行器和隔离器	ETC 知名厂家	ETC
AM60007-1	CHANGE PART KIT FOR 71522 CONN 文件：156.25 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60007-3	CHANGE PART KIT FOR 71522 CONN 文件：156.25 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60007-3	MANVAL RIBBON CA. TERMR 文件：164.5 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60008-1	MANVAL RIBBON CA. TERMR 文件：164.5 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM6000T001-SM	RF射频同轴连接器	ANATECH	ANATECH
AM60026	MANVAL RIBBON CA. TERMR 文件：164.5 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026	MANVAL RIBBON CA. TERMR 文件：188.17 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026	CHANGE PART KIT FOR 71522 CONN 文件：156.25 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026	MANVAL RIBBON CA. TERMR 文件：169.58 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026A100	CHANGE PART KIT FOR 71522 CONN 文件：156.25 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026-B	MANVAL RIBBON CA. TERMR 文件：164.5 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026B100	MANVAL RIBBON CA. TERMR 文件：164.5 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026C100	MANVUAL RIBBON CA. TERMR 文件：202.65 Kbytes Page：5 Pages	MOLEX 莫仕	MOLEX
AM60026F100	MANVAL RIBBON CA. TERMR 文件：188.17 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60026G100	MANVAL RIBBON CA. TERMR 文件：169.58 Kbytes Page：4 Pages	MOLEX 莫仕	MOLEX
AM60037-5	90075 PHONE PLUG ARBOR PRESS 文件：289.78 Kbytes Page：9 Pages	MOLEX 莫仕	MOLEX
AM60037-5	PHONE PLUG TOOLING ADAPT. KIT FOR 60026 PRESS 文件：289.78 Kbytes Page：9 Pages	MOLEX 莫仕	MOLEX
AM60037-6	PHONE PLUG TOOLING ADAPT. KIT FOR 60026 PRESS 文件：289.78 Kbytes Page：9 Pages	MOLEX 莫仕	MOLEX
AM60037-6	90075 PHONE PLUG ARBOR PRESS 文件：289.78 Kbytes Page：9 Pages	MOLEX 莫仕	MOLEX
AM60042	IDT - Manual - Adapter Kit 文件：16.52 Kbytes Page：1 Pages	MOLEX 莫仕	MOLEX
AM60510-10	Hawk Discrete Wire Termination Machine Operation Manual 文件：2.73438 Mbytes Page：39 Pages	MOLEX 莫仕	MOLEX
AM60510-11	Hawk Discrete Wire Termination Machine Operation Manual 文件：2.73438 Mbytes Page：39 Pages	MOLEX 莫仕	MOLEX

AM60产品属性

类型
描述
消音器设计：
Other; Dissipative Silencer
端口类型：
Inlet; Exhaust
噪声衰减：
47 dB
最大流量：
48000 SCFM (81587 m³/hr)
入口尺寸：
6.0 to 48.0 inch (152 to 1219 mm)
出口尺寸：
6.0 to 48.0 inch (152 to 1219 mm)
横截面：
Sq/Rect
安装：
Flange
产品类别：
Silencers and Mufflers (Industrial)

AM60供应商更多...

更新时间：2026-5-23 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	AM6017	FTS	2016+	SOT23-6	6000	全新原装现货,量大价优,公司可售样!	询价
上海意淼电子科技有限公司	AM6070DC	AM	23+	DIP	12000	全新原装假一赔十	询价
深圳市昌和盛利电子有限公司	AM6012F	PHI	26+	CERDIP-20	12300	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市科恒伟业电子有限公司	AM6012	ATLANTA	24+	VQFN	7850	只做原装正品现货或订货假一赔十!	询价
中天科工半导体（深圳）有限公司	AM60U-2405SZ	AIMTEC	25+	全新-电源模块	14439	AIMTEC电源模块AM60U-2405SZ交期短价格好#即刻询购立享优惠#长期有排单订	询价
深圳市富利微电子科技有限公司	AM60N04-12D-T1-PF	ANALOGPOW	25+	TO-252	33500	全新进口原装现货,假一罚十	询价
深圳市得捷芯城科技有限公司	AM6072DC	AMD(超微)	25+	标准封装	19083	我们只是原厂的搬运工	询价
深圳市佳鑫美电子科技有限公司	AM6012F	S	25+	DIP20	2650	原装优势!绝对公司现货	询价
深圳市恒达亿科技有限公司	AM6012DC	AMD	25+	DIP-20	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市一线半导体有限公司	AM6070DC		24+	DIP	50		询价

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2024-1-8
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2021-8-3

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找IC，尽在114IC

AM60产品属性

AM60供应商更多...

AM60芯片相关品牌

AM60规格书下载地址

AM60参数引脚图相关

AM60数据表相关新闻

AM62x/AM62x-Q1 Sitara™低成本MPU

AM79C874

AM6968N-T1-PF

AM5922N-T1-PF

AM5920N-T1-PF

AM5729BABCX

DdatasheetPDF页码索引