P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. The AM4435 is available in SOP8 Package FEATURES  VDS = -30V,ID = -9.1A RDS(ON)

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no

SOP8 MOSFET

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION AM4435A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalan

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION AM4435A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalan

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION AM4435A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalan

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. The AM4435 is available in SOP8 Package FEATURES  VDS = -30V,ID = -9.1A RDS(ON)

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. The AM4435 is available in SOP8 Package FEATURES  VDS = -30V,ID = -9.1A RDS(ON)

SOP8 MOSFET

P-Channel 30-V (D-S) MOSFET

文件：1.00264 Mbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00264 Mbytes Page：9 Pages

P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • VDS=-30V,ID=-8A • RDS(on) (m-ohm) 0.020 @ VGS = - 10V ,ID= -8A 0.030 @ VGS = -4.5V,ID= -5A APPLICATIONS • Load Switches • B

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

DELAY MODULES,TTL,SURFACE MOUNTED

文件：137.17 Kbytes Page：1 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00935 Mbytes Page：9 Pages