650V 40A IGBT MOSFET

DESCRIPTION The AM40T65 is available in TO-3PN package. FEATURE  Fast Switching  Positive temperature coefficient  Fast recovery anti-parallel diode APPLICATION  Welding converters  UPS  Air condition

绝缘栅双极 IGBT

650V 40A IGBT MOSFET

DESCRIPTION The AM40T65 is available in TO-3PN package. FEATURE  Fast Switching  Positive temperature coefficient  Fast recovery anti-parallel diode APPLICATION  Welding converters  UPS  Air condition

650V 40A IGBT MOSFET

DESCRIPTION The AM40T65 is available in TO-3PN package. FEATURE  Fast Switching  Positive temperature coefficient  Fast recovery anti-parallel diode APPLICATION  Welding converters  UPS  Air condition

Field Stop Trench IGBT 650 V, 40 A

General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features  Maximum Junc

丝印代码：40T65SQ；Field Stop Trench IGBT 40A, 650V

文件：255.16 Kbytes Page：8 Pages

650 V, 40 A Field Stop Trench IGBT

文件：308.16 Kbytes Page：10 Pages

650V Field Stop IGBT

文件：1.88982 Mbytes Page：8 Pages

650V Field Stop IGBT

文件：1.88982 Mbytes Page：8 Pages