S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. L

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications. This device is characterized at 50 µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, du

S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

0.65-ohm, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch

DESCRIPTION The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail power supply. Audio signals can swing below ground down to V+ - 4.3 V. FEATURES • Halogen-free according to IEC 61249

0.65-廓, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch

FEATURES • Halogen-free according to IEC 61249-2-21 definition • Wide operation voltage range: 1.6 V to 4.3 V • Low 0.6 Ω (typical at 2.7 V) on-resistance • Guaranteed logic high threshold: Vth(high) = 1.2 V at V+ = 4.3 V • - 82 dB crosstalk and - 76 dB off-isolation at 100 kHz • 250 MHz,

Halogen and Phosphorus-Free 94V-0 Hole Plugs

文件：136.28 Kbytes Page：1 Pages

Nylon Knock Out Seals and Thick Panel Knock Out Seals

文件：128.57 Kbytes Page：1 Pages

Precision Operational Amplifier

文件：1.55938 Mbytes Page：18 Pages