Halogen and Phosphorus-Free 94V-0 Hole Plugs

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Nylon Knock Out Seals and Thick Panel Knock Out Seals

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包装：散装 描述：ELECTRO-FASHION STARTER PACK, ST 创客/DIY，教育 可穿戴设备

包装：散装 描述：HFP 1093 94V-0 BLACK 五金件，紧固件，配件 孔插头 - 锥形盖

125 Watts, 36 Volts, 100us, 10 Radar 2700-2900 MHz

GENERAL DESCRIPTION The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100µs pulse width, 10 duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of

170 Watts, 38 Volts, 100us, 10 170 Watts, 38 Volts, 100짰, 10

GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10 duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of

170 Watts, 38 Volts, 100關s, 10 Radar 2700-2900 MHz

GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10 duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF/Microwave Si BJT Power Devices & Pallets

INTERBUS OPC Server for Data Exchange Between Distributed INTERBUS Networks and Visualization Systems

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RF/Microwave Si BJT Power Devices & Pallets

8 x930A x UNIVERSAL SERIAL BUS MICROCONTROLLER

8 x930A x UNIVERSAL SERIAL BUS MICROCONTROLLER

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N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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N-Channel Enhancement-Mode Lateral MOSFETs

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Airfast RF Power LDMOS Transistor

External voltage supply, max. 4 slave boards incl. 24 V DC/5 V DC filter, slot design, incl. accessories

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300 Watts - 100關s, 10, 36V S-Band Pulsed Radar 2700 - 2900 MHz

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Memory - IBS MC FLASH 2MB

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Program and configuration memory, 4 Mbyte

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POWER TERMINAL 125 x 250 GRID - 6 PIN

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Adapter kit

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POWER TERMINAL WITH INSULATOR 125 x 250 GRID - 6PIN

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Connector set, for Inline Remote Field Controller

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Fast inputs for interrupt processing, event counting, and period measurement

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0.65-ohm, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch

DESCRIPTION The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail power supply. Audio signals can swing below ground down to V+ - 4.3 V. FEATURES • Halogen-free according to IEC 61249

0.65-廓, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch

FEATURES • Halogen-free according to IEC 61249-2-21 definition • Wide operation voltage range: 1.6 V to 4.3 V • Low 0.6 Ω (typical at 2.7 V) on-resistance • Guaranteed logic high threshold: Vth(high) = 1.2 V at V+ = 4.3 V • - 82 dB crosstalk and - 76 dB off-isolation at 100 kHz • 250 MHz,

Precision Operational Amplifier

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