RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

DESCRIPTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY G

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. FEATURES: • Internal Input/Output Matching Networks • PG = 9.2 dB min. at 75 W/1090 MHz • Omnigold™ Metalization System

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTP

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-300 is a rugged, Class C common base device specifically designed for new ModeS interrogator and transponder applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTING ■ LOW RF THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 15:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GE

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. ■ POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN ■ 10:1 LOAD VSWR CAPABILITY @ 10µS., 1 DUTY ■ SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE ■ E

NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-500 is a Common Base Device Designed for Pulsed L-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Hermetic Metal/Ceramic Package

NPN SILICON RF POWER TRANSISTOR

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS, AVIONICS APPLICATIONS

3-CHANNEL PC POWER SUPPLY SUPERVISOR FOR 3.3V, 5V AND 12V

文件：84.97 Kbytes Page：7 Pages

17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter

文件：607.19 Kbytes Page：26 Pages

17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter

文件：607.19 Kbytes Page：26 Pages

17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter

文件：607.19 Kbytes Page：26 Pages

Sampling A/D Converters

文件：123.84 Kbytes Page：1 Pages