NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-500 is a Common Base Device Designed for Pulsed L-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Hermetic Metal/Ceramic Package

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. ■ POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN ■ 10:1 LOAD VSWR CAPABILITY @ 10µS., 1 DUTY ■ SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE ■ E

500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate/source voltage range for improved class C operation • In compliance with the European Directive 2002/95/EC Description The STAC10

50V Supply Voltage

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