Silicon Miniature Single-Phase Bridge

Voltage: 50- 1000 Volts Current: 1.0- 1.5 Amp Features Ratings to 1000V PRV Surge overloadrating- 30/50 amperes peak Ideal for printed circuit board Reliable constructionutilizing moldedplastic Mounting position:Any

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

VOLTAGE -50 to 1000 Volts CURRENT -1.0~1.5 Amperes FEA TURES ● Ratings to 1000V PRV ● Surge overload rating—30/50 amperes peak ● Ideal for printed circuit board ● Reliable construction utilizing molded plastic ● Mounting position: Any

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

Silicon Miniature Single-Phase Bridge

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

VOLTAGE -50 to 1000 Volts CURRENT -1.0~1.5 Amperes FEA TURES ● Ratings to 1000V PRV ● Surge overload rating—30/50 amperes peak ● Ideal for printed circuit board ● Reliable construction utilizing molded plastic ● Mounting position: Any

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

Silicon Miniature Single-Phase Bridge

Voltage: 50- 1000 Volts Current: 1.0- 1.5 Amp Features Ratings to 1000V PRV Surge overloadrating- 30/50 amperes peak Ideal for printed circuit board Reliable constructionutilizing moldedplastic Mounting position:Any

Silicon Miniature Single-Phase Bridge

Features: • Ratings to 1000V PRV • Surge overloadrating - 30/50 amperes peak • Ideal for printed circuited board • Reliable construction utilizing molded plastic • Mounting position: Any

RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

DESCRIPTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY G

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. FEATURES: • Internal Input/Output Matching Networks • PG = 9.2 dB min. at 75 W/1090 MHz • Omnigold™ Metalization System

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTP

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-300 is a rugged, Class C common base device specifically designed for new ModeS interrogator and transponder applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTING ■ LOW RF THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 15:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GE

NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-500 is a Common Base Device Designed for Pulsed L-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Hermetic Metal/Ceramic Package

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. ■ POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN ■ 10:1 LOAD VSWR CAPABILITY @ 10µS., 1 DUTY ■ SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE ■ E

MOSFET N-CHANNEL 1.8-V (G-S) MOSFET

FEATURES TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V High-Side Switching Low On-Resistance: 0.7Ω Low Threshold: 0.8V (typ) Fast Switching Speed: 10ns Available in SC-89 Package DESCRIPTION FEATURES The AM1012 is available in SC-89 Package APPLICATION  Drive

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

One Channel H-Bridge Motor Driver

Features and Benefits  Wide Supply Voltage Range (2.0V~6.8V)  0.9A Continuous Current, 2A Peak Current  Low Standby Mode Current (Typ=0.01μA)  Low Quiescent Operation Current  Low MOSFETs On-resistance 0.6Ω@Io=0.2A; 0.65Ω@Io=0.6A  Provide Four Operation Modes: Forward/Reverse/Stop

Silicon Miniature Single-Phase Bridge

Features: • Ratings to 1000V PRV • Surge overloadrating - 30/50 amperes peak • Ideal for printed circuited board • Reliable construction utilizing molded plastic • Mounting position: Any

Surface-mounted chip LED device

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HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages