Silicon Miniature Single-Phase Bridge

Voltage: 50- 1000 Volts Current: 1.0- 1.5 Amp Features Ratings to 1000V PRV Surge overloadrating- 30/50 amperes peak Ideal for printed circuit board Reliable constructionutilizing moldedplastic Mounting position:Any

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

VOLTAGE -50 to 1000 Volts CURRENT -1.0~1.5 Amperes FEA TURES ● Ratings to 1000V PRV ● Surge overload rating—30/50 amperes peak ● Ideal for printed circuit board ● Reliable construction utilizing molded plastic ● Mounting position: Any

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

Silicon Miniature Single-Phase Bridge

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

VOLTAGE -50 to 1000 Volts CURRENT -1.0~1.5 Amperes FEA TURES ● Ratings to 1000V PRV ● Surge overload rating—30/50 amperes peak ● Ideal for printed circuit board ● Reliable construction utilizing molded plastic ● Mounting position: Any

Silicon Miniature Single-Phase Bridge

Voltage: 50- 1000 Volts Current: 1.0- 1.5 Amp Features Ratings to 1000V PRV Surge overloadrating- 30/50 amperes peak Ideal for printed circuit board Reliable constructionutilizing moldedplastic Mounting position:Any

Silicon Miniature Single-Phase Bridge

Features: • Ratings to 1000V PRV • Surge overloadrating - 30/50 amperes peak • Ideal for printed circuited board • Reliable construction utilizing molded plastic • Mounting position: Any

RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

DESCRIPTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY G

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. FEATURES: • Internal Input/Output Matching Networks • PG = 9.2 dB min. at 75 W/1090 MHz • Omnigold™ Metalization System

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTP

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-300 is a rugged, Class C common base device specifically designed for new ModeS interrogator and transponder applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTING ■ LOW RF THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 15:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GE

NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-500 is a Common Base Device Designed for Pulsed L-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Hermetic Metal/Ceramic Package

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. ■ POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN ■ 10:1 LOAD VSWR CAPABILITY @ 10µS., 1 DUTY ■ SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE ■ E

MOSFET N-CHANNEL 1.8-V (G-S) MOSFET

FEATURES TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V High-Side Switching Low On-Resistance: 0.7Ω Low Threshold: 0.8V (typ) Fast Switching Speed: 10ns Available in SC-89 Package DESCRIPTION FEATURES The AM1012 is available in SC-89 Package APPLICATION  Drive

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

One Channel H-Bridge Motor Driver

Features and Benefits  Wide Supply Voltage Range (2.0V~6.8V)  0.9A Continuous Current, 2A Peak Current  Low Standby Mode Current (Typ=0.01μA)  Low Quiescent Operation Current  Low MOSFETs On-resistance 0.6Ω@Io=0.2A; 0.65Ω@Io=0.6A  Provide Four Operation Modes: Forward/Reverse/Stop

Silicon Miniature Single-Phase Bridge

Features: • Ratings to 1000V PRV • Surge overloadrating - 30/50 amperes peak • Ideal for printed circuited board • Reliable construction utilizing molded plastic • Mounting position: Any

Surface-mounted chip LED device

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0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Smooth, high torque, roller ratchet handle

文件：254.3 Kbytes Page：3 Pages

Precision Wirewound Resistors

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