High linearity and P1dB

文件：673.54 Kbytes Page：9 Pages

1.8-2.2GHz Low Noise, High Gain, High Linearity Balanced Amplifier Module

文件：673.54 Kbytes Page：9 Pages

50 Watt High Power SPDT Switch with LNA Module

文件：297.98 Kbytes Page：12 Pages

2.30 GHz ??2.40 GHz 50 Watt High Power SPDT Switch with LNA Module

文件：297.98 Kbytes Page：12 Pages

2.30 GHz – 2.40 GHz 50 Watt High Power SPDT Switch with LNA Module

50 Watt High Power SPDT Switch with LNA Module

文件：297.98 Kbytes Page：12 Pages

50 Watt High Power SPDT Switch with LNA Module

文件：297.98 Kbytes Page：12 Pages

封装/外壳：24-SMD 模块，无引线 功能：LNA，开关 包装：管件 描述：IC SPDT SW LNA 2.40GHZ 24MCOB RF/IF，射频/中频和 RFID RF 其它 IC 和模块

High linearity and P1dB

1.8-2.2GHz Low Noise, High Gain, High Linearity Balanced Amplifier Module

文件：673.54 Kbytes Page：9 Pages

High linearity and P1dB

文件：673.54 Kbytes Page：9 Pages

封装/外壳：22-SMD 模块，无引线 包装：散装 描述：IC AMP CELL 1.8GHZ-2.2GHZ 22MCOB RF/IF，射频/中频和 RFID 射频放大器

High linearity and P1dB

文件：673.54 Kbytes Page：9 Pages

1.8-2.2GHz Low Noise, High Gain, High Linearity Balanced Amplifier Module

文件：673.54 Kbytes Page：9 Pages

1.8-2.2GHz Low Noise, High Gain, High Linearity Balanced Amplifier Module

文件：673.54 Kbytes Page：9 Pages

High linearity and P1dB

文件：673.54 Kbytes Page：9 Pages

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .031 x .020 Inches b) AWG of Ends 36 c) Number of Carriers 16 d) Nominal Percent Coverage N/A e) Total Number of Ends 16 f) Approx.

ROTARY MOTION | PRECISION SENSOR

Features • Servo Mount / Ball Bearing • 7/8” TO 3” Diameter Servo Mount • Conductive Plastic Single-turn Precision Potentiometers

9V SUPER HEAVY DUTY

文件：90.84 Kbytes Page：2 Pages

500/10 31 GW

文件：121.79 Kbytes Page：2 Pages