CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175 °C • IDDC = 30 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowes

汽车级 1200V 碳化硅 (SiC) 沟槽功率 MOSFET，采用 D2PAK-7L 封装，160mΩ

CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 34 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

SiC N-Channel MOSFET

FEATURES ·Revolutionary Semiconductor Material-Silicon Carbide ·Very Low Switching Losses ·Fully Controlled dv/dt APPLICATIONS ·Power Factor Correction ·Switch Mode Power Supplies ·DC-DC Converters ·Battery Charges

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 31 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

Silicon Carbide MOSFET

文件：843.07 Kbytes Page：17 Pages