AH37价格

参考价格:¥2.0956

型号:AH373-PG-B 品牌:Diodes 备注:这里有AH37多少钱,2025年最近7天走势,今日出价,今日竞价,AH37批发/采购报价,AH37行情走势销售排行榜,AH37报价。
型号 功能描述 生产厂家&企业 LOGO 操作

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE, HIGH-SENSITIVITY HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical ResistanttoPhysicalStress Single,Open-DrainOutputAH3712QorInternalPull-Up AH3712AQ(*FutureNewProduct) OutputwithOvercurrentLi

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH

Features BipolarLatch AH3712/AH3712A:SouthPoleOn,NorthPoleOff AH3712B:SouthPoleOff,NorthPoleOn 3.0Vto27VOperatingVoltageRange HighSensitivity:BOPandBRPof±25GTypical Resistanttophysicalstress SingleOpen-Drain(AH3712,AH3712B)or InternalPull-UpR

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainorInternalPullupOutputwithOvercurrent Limit Cho

DIODESDiodes Incorporated

美台半导体

DIODES

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features BipolarLatch(SouthPole:On,NorthPole:Off) 3.0Vto27VOperatingVoltageRange 40VLoadDumpProtection SensitivityOptions:BOPandBRPof±30Gto±140GTypical ResistanttoPhysicalStress Single,Open-DrainOutputwithOvercurrentLimit Chopper-StabilizedDesi

DIODESDiodes Incorporated

美台半导体

DIODES

AH37产品属性

  • 类型

    描述

  • 型号

    AH37

  • 制造商

    ANACHIP

  • 制造商全称

    Anachip Corp

  • 功能描述

    Internal Pull-up Hall Effect Latch

更新时间:2025-8-1 12:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
22+
SIP3
90000
正规代理渠道假一赔十
24+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择
DIODES(美台)
2447
SIP-3
315000
4000个/盒一级代理专营品牌!原装正品,优势现货,长
DIODES(美台)
2021+
SIP-3
499
DIODESINC
23+
NA
12730
原装正品代理渠道价格优势
DIODES/美台
23+
SIP-3
50000
全新原装正品现货,支持订货
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
DIODES
1829+
SIP3
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES/美台
2450+
SIP3
6540
只做原装正品假一赔十为客户做到零风险!!
DIODES/美台
24+
NA/
16130
原装现货,当天可交货,原型号开票

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