High Sensitivity, with 100mW nominal operating power, in a compact and space saving case

FEATURES 1. Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the packaging density can be increased to allow for much smaller designs. 2. High sensitivity single side stable type (Nominal operatin

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

包装：管件 描述：RELAY TELECOM DPDT 1A 4.5VDC 继电器 信号继电器，高达 2 A

包装：管件 描述：RELAY TELECOM DPDT 1A 4.5VDC 继电器 信号继电器，高达 2 A

信号继电器

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

磁保持继电器

磁保持继电器

256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr

256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m

3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM)

TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios.

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in