Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

FEATURES • 8-Channel Complete Analog Front-End – LNA, VCAT, PGA, LPF, ADC, and CW Mixer • Programmable Gain Low-Noise Amplifier (LNA) – 24/18/12 dB Gain – 0.25/0.5/1 VPP Linear Input Range – 0.63/0.7/0.9 nV/rtHz IRN (Low Noise Mode) – 0.99/1.0/1.05 nV/rtHz IRN (Low Power Mode) – Programma

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

文件：1.09198 Mbytes Page：71 Pages

Fully Integrated, 8-Channel Ultrasound Analog Front End

文件：1.17733 Mbytes Page：74 Pages

封装/外壳：135-BGA 包装：托盘 描述：IC AFE 8 CHAN 12BIT 135NFBGA 集成电路（IC） 模拟前端（AFE）

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

文件：1.16731 Mbytes Page：75 Pages

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

文件：1.09198 Mbytes Page：71 Pages

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

FEATURES • 8-Channel Complete Analog Front-End – LNA, VCAT, PGA, LPF, ADC, and CW Mixer • Programmable Gain Low-Noise Amplifier (LNA) – 24/18/12 dB Gain – 0.25/0.5/1 VPP Linear Input Range – 0.63/0.7/0.9 nV/rtHz IRN (Low Noise Mode) – 0.99/1.0/1.05 nV/rtHz IRN (Low Power Mode) – Programma

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

FEATURES • 8-Channel Complete Analog Front-End – LNA, VCAT, PGA, LPF, ADC, and CW Mixer • Programmable Gain Low-Noise Amplifier (LNA) – 24/18/12 dB Gain – 0.25/0.5/1 VPP Linear Input Range – 0.63/0.7/0.9 nV/rtHz IRN (Low Noise Mode) – 0.99/1.0/1.05 nV/rtHz IRN (Low Power Mode) – Programma

BROADBAND: RF & WIRELESS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE5807B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Standard Product ACE5807B is Pb-free. Features • VDS (V) = -12V • ID= -16A • RDS(ON)  

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE5807B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Standard Product ACE5807B is Pb-free. Features • VDS (V) = -12V • ID= -16A • RDS(ON)