AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

1 Features • Local and remote diode temperature sensor – ±2.5°C accuracy, maximum – 0.0625°C resolution • Internal EEPROM for autonomous operation – Four independent transfer functions storage – Device configuration storage – Open space for user storage • Four analog outputs – Four monoto

AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

文件：968.12 Kbytes Page：7 Pages

封装/外壳：24-VFQFN 裸露焊盘 包装：管件 描述：4-CHANNEL POWER-AMPLIFIER MONITO 集成电路（IC） 专用 IC

AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

1 Features • Local and remote diode temperature sensor – ±2.5°C accuracy, maximum – 0.0625°C resolution • Internal EEPROM for autonomous operation – Four independent transfer functions storage – Device configuration storage – Open space for user storage • Four analog outputs – Four monoto

AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

文件：968.12 Kbytes Page：7 Pages

AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

1 Features • Local and remote diode temperature sensor – ±2.5°C accuracy, maximum – 0.0625°C resolution • Internal EEPROM for autonomous operation – Four independent transfer functions storage – Device configuration storage – Open space for user storage • Four analog outputs – Four monoto

AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

1 Features • Local and remote diode temperature sensor – ±2.5°C accuracy, maximum – 0.0625°C resolution • Internal EEPROM for autonomous operation – Four independent transfer functions storage – Device configuration storage – Open space for user storage • Four analog outputs – Four monoto

AFE10004-EP 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

1 Features • Specified for defense and aerospace applications • Controlled baseline • One assembly and test site • One fabrication site • Product traceability • Extended product life cycle • Local and remote diode temperature sensor – ±2.5°C error, maximum – 0.0625°C resolution • Interna

Nylon PCB Supports - Imperial Spacing

文件：111.86 Kbytes Page：1 Pages

Indicating insert

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High-Temp PGA ZIF Test & Burn-in Socket for Footprints on Std 8x8 to 21x21 Grid

文件：1.04472 Mbytes Page：2 Pages