HIGH VOLTAGE AND CURRENT CUT-OFF CAPACITY IN A COMPACT PACKAGE

FEATURES • Control of large voltages and currents The relays have a sealed construction that is filled with a hydrogen gas compound, and use a permanent magnet to establish a magnetic path for the arc. This allows them to switch high-level DC voltages of up to 400V DC. • Compact size a

包装：散装 描述：RELAY GEN PURPOSE SPST 60A 12V 继电器 功率继电器，高于 2 A

包装：散装 描述：RELAY GEN PURPOSE SPST 60A 12V 继电器 功率继电器，高于 2 A

功率继电器

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. FEATURES • Input matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current