位置:首页 > IC中文资料第12719页 > MJW16012
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJW16012 | NPN SILICON POWER TRANSISTORS SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain | ONSEMI 安森美半导体 | ||
MJW16012 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati | MOTOROLA 摩托罗拉 | ||
MJW16012 | SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
NPN SILICON POWER TRANSISTORS SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain | ONSEMI 安森美半导体 | |||
15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati | MOTOROLA 摩托罗拉 | |||
NPN microwave power transistor DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. FEATURES • Input matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current | PHILIPS 飞利浦 |
MJW16012产品属性
- 类型
描述
- 型号
MJW16012
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
NPN SILICON POWER TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
25+ |
66880 |
原装正品,欢迎询价 |
||||
ON/安森美 |
23+ |
TO-3P |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
22+ |
TO-3P |
3000 |
原装正品,支持实单 |
|||
SPTECH质超 |
2407+ |
TO-3 |
30098 |
全新原装!仓库现货,大胆开价! |
|||
ON |
24+ |
TO-247 |
8866 |
||||
onsemi |
25+ |
TO-247-3 |
7734 |
样件支持,可原厂排单订货! |
|||
ON |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ON |
23+ |
TO-3P |
8000 |
只做原装现货 |
|||
SPTECH |
2447 |
TO-3PN |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
ONSEMI/安森美 |
25+ |
TO-3P |
45000 |
本公司 只做全新原装正品 |
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MJW16012规格书下载地址
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2019-11-30
DdatasheetPDF页码索引
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