DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

FEATURES

• Input matching cell allows an easier

design of circuits

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

stable characteristics and excellent

lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance.

APPLICATIONS

Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range.