Precision 짹1.7 g Single/Dual Axis Accelerometer

GENERAL DESCRIPTION The ADXL103/ADXL203 are high precision, low power, complete single- and dual-axis accelerometers with signal conditioned voltage outputs, all on a single, monolithic IC. The ADXL103/ADXL203 measure acceleration with a full-scale range of ±1.7 g, ±5 g, or ±18 g. The ADXL103/A

精密±1.7 g、±5 g、±18 g 双轴iMEMS® 加速度计

ADXL203是一款高精度、低功耗、完整的双轴加速度计，提供经过信号调理的电压输出，所有功能均集成于一个单芯片IC中。ADXL203的满量程加速度测量范围为±1.7 g、±5 g或±18 g。ADXL203既可以测量动态加速度（例如振动），也可以测量静态加速度（例如重力）。\n\n 典型本底噪声为110 µg/√Hz，因而在倾斜检测应用中，可以利用窄带宽(<60 Hz)解析1 mg（0.06°倾斜）以下的信号。\n\n 用户使用XOUT 和 YOUT引脚上的电容CX和CY 选择该加速度计的带宽。根据应用需要，可以选择0.5 Hz至2.5 kHz范围内的带宽。\n\n • 在单芯片IC上实现高性能双轴加速度计\n\n• 5 mm × 5 mm × 2 mm LCC封装\n\n• 分辨率：1 mg (60 Hz)\n\n• 低功耗：700 µA（典型值，VS = 5 V）\n\n• 高零g偏置稳定性\n\n• 高灵敏度精度;

Precision 1.7g, -1.7g, 5g, -5g, 18g, -18g Single-/ Dual-Axis iMEMS Accelerometer

GENERAL DESCRIPTION The ADXL103/ADXL203 are high precision, low power, complete single- and dual-axis accelerometers with signal conditioned voltage outputs, all on a single, monolithic IC. The ADXL103/ADXL203 measure acceleration with a full-scale range of ±1.7 g, ±5 g, or ±18 g. The ADXL103/A

Precision 짹1.7 g Single/Dual Axis Accelerometer

GENERAL DESCRIPTION The ADXL103/ADXL203 are high precision, low power, complete single- and dual-axis accelerometers with signal conditioned voltage outputs, all on a single, monolithic IC. The ADXL103/ADXL203 measure acceleration with a full-scale range of ±1.7 g, ±5 g, or ±18 g. The ADXL103/A

Precision 1.7g, -1.7g, 5g, -5g, 18g, -18g Single-/ Dual-Axis iMEMS Accelerometer

GENERAL DESCRIPTION The ADXL103/ADXL203 are high precision, low power, complete single- and dual-axis accelerometers with signal conditioned voltage outputs, all on a single, monolithic IC. The ADXL103/ADXL203 measure acceleration with a full-scale range of ±1.7 g, ±5 g, or ±18 g. The ADXL103/A

Precision 짹1.7 g Single/Dual Axis Accelerometer

GENERAL DESCRIPTION The ADXL103/ADXL203 are high precision, low power, complete single- and dual-axis accelerometers with signal conditioned voltage outputs, all on a single, monolithic IC. The ADXL103/ADXL203 measure acceleration with a full-scale range of ±1.7 g, ±5 g, or ±18 g. The ADXL103/A

Precision 1.7g, -1.7g, 5g, -5g, 18g, -18g Single-/ Dual-Axis iMEMS Accelerometer

GENERAL DESCRIPTION The ADXL103/ADXL203 are high precision, low power, complete single- and dual-axis accelerometers with signal conditioned voltage outputs, all on a single, monolithic IC. The ADXL103/ADXL203 measure acceleration with a full-scale range of ±1.7 g, ±5 g, or ±18 g. The ADXL103/A

Precision 1.7g, -1.7g, 5g, -5g, 18g, -18g Single-/ Dual-Axis iMEMS Accelerometer

GENERAL DESCRIPTION The ADXL103/ADXL203 are high precision, low power, complete single- and dual-axis accelerometers with signal conditioned voltage outputs, all on a single, monolithic IC. The ADXL103/ADXL203 measure acceleration with a full-scale range of ±1.7 g, ±5 g, or ±18 g. The ADXL103/A

Precision 1.7 g, 5 g, 18 g Single-/ Dual-Axis iMEMS Accelerometer

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封装/外壳：8-CLCC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ACCELEROMETER 1.7G ANALOG 8LCC 传感器，变送器 运动传感器 - 加速计

包装：散装 描述：BOARD EVAL FOR ADXL203 开发板，套件，编程器 评估板 - 传感器

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.