Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

超低噪声、3.0V LDO XFET®基准电压源，具有吸电流和源电流能力

ADR440/ADR441/ADR443/ADR444/ADR445系列XFET®基准电压源具有超低噪声、高精度和低温度漂移性能。利用ADI公司的温度漂移曲率校正专利技术和XFET（外加离子注入场效应管）技术，可以使ADR440/ADR441/ADR443/ADR444/ADR445电压随温度变化的非线性度降至低点。\n\n XFET基准电压源的噪声性能优于嵌入式齐纳基准电压源，且所需的电源电压裕量较小(500 mV)。这种特性组合使ADR440/ADR441/ADR443/ADR444/ADR445系列非常适合高端数据采集系统、光学网络和医疗应用中的精密信号转换。\n\n • 超低噪声（0.1 Hz至10 Hz）\nADR440：1 μV p-p\nADR441：1.2 μV p-p\nADR443：1.4 μV p-p\nADR444：1.8 μV p-p\nADR445：2.25 μV p-p\n\n• 输入范围: (VOUT + 500 mV) 至18 V \n\n• 出色的温度系数 \nA 级: 10 ppm/°C \nB 级: 3 ppm/°C;

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

文件：403.85 Kbytes Page：20 Pages

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

文件：403.85 Kbytes Page：20 Pages

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

文件：403.85 Kbytes Page：20 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.13% 8MSOP 集成电路（IC） 电压基准

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.13% 8SOIC 集成电路（IC） 电压基准

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

文件：403.85 Kbytes Page：20 Pages

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

N-Channel JFET Monolithic Dual

DESCRIPTION The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage ( FEATURES • High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical • Low Leakage . . . . . . . . . . . . . . . .

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

文件：223.54 Kbytes Page：6 Pages