Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.13% 8SOIC 集成电路（IC） 电压基准

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC VREF SERIES 0.13% 8SOIC 集成电路（IC） 电压基准

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

N-Channel JFET Monolithic Dual

DESCRIPTION The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage ( FEATURES • High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical • Low Leakage . . . . . . . . . . . . . . . .

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

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