Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References

GENERAL DESCRIPTION The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints. FEATURES Low noise (0.1 Hz to 10 Hz) ADR42

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.12% 8MSOP 集成电路（IC） 电压基准

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.12% 8MSOP 集成电路（IC） 电压基准

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

文件：30.84 Kbytes Page：1 Pages