Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References

GENERAL DESCRIPTION The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints. FEATURES Low noise (0.1 Hz to 10 Hz) ADR42

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VREF SERIES 0.12% 8SOIC 集成电路（IC） 电压基准

Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References

GENERAL DESCRIPTION The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints. FEATURES Low noise (0.1 Hz to 10 Hz) ADR42

Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References

GENERAL DESCRIPTION The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints. FEATURES Low noise (0.1 Hz to 10 Hz) ADR42

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.12% 8MSOP 集成电路（IC） 电压基准

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

文件：30.84 Kbytes Page：1 Pages