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ADPA价格
参考价格：￥5.4581
型号：ADPA04S04 品牌：TEConnectivity/Alcoswitc 备注：这里有ADPA多少钱，2025年最近7天走势，今日出价，今日竞价，ADPA批发/采购报价，ADPA行情走势销售排行榜，ADPA报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range. | AD 亚德诺 |   | ||
46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range. | AD 亚德诺 | | ||
46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range. | AD 亚德诺 | | ||
46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range. | AD 亚德诺 | | ||
1GHz to 22GHz, 15W, GaN Power Amplifier FEATURES ► Frequency range: 1GHz to 22GHz ► 50Ω matched input and output ► Power gain: 14dB typical from 8GHz to 16GHz ► POUT: 42dBm typical from 8GHz to 16GHz ► PAE: 25% typical from 8GHz to 16GHz ► S21: 20.5dB typical from 8GHz to 16GHz ► OIP3: 44dBm typical from 8GHz to 16GHz ► Inte | AD 亚德诺 | | ||
1GHz to 22GHz, 15W, GaN Power Amplifier FEATURES ► Frequency range: 1GHz to 22GHz ► 50Ω matched input and output ► Power gain: 14dB typical from 8GHz to 16GHz ► POUT: 42dBm typical from 8GHz to 16GHz ► PAE: 25% typical from 8GHz to 16GHz ► S21: 20.5dB typical from 8GHz to 16GHz ► OIP3: 44dBm typical from 8GHz to 16GHz ► Inte | AD 亚德诺 | | ||
1GHz to 22GHz, 15W, GaN Power Amplifier FEATURES ► Frequency range: 1GHz to 22GHz ► 50Ω matched input and output ► Power gain: 14dB typical from 8GHz to 16GHz ► POUT: 42dBm typical from 8GHz to 16GHz ► PAE: 25% typical from 8GHz to 16GHz ► S21: 20.5dB typical from 8GHz to 16GHz ► OIP3: 44dBm typical from 8GHz to 16GHz ► Inte | AD 亚德诺 | | ||
2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier FEATURES ► Internally matched and AC-coupled, 40 W, GaN power amplifier ► Integrated drain bias inductor ► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz ► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 | AD 亚德诺 | | ||
2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier FEATURES ► Internally matched and AC-coupled, 40 W, GaN power amplifier ► Integrated drain bias inductor ► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz ► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 | AD 亚德诺 | | ||
2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier FEATURES ► Internally matched and AC-coupled, 40 W, GaN power amplifier ► Integrated drain bias inductor ► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz ► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 | AD 亚德诺 | | ||
0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier FEATURES ► Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier ► RF input and RF output AC-coupled ► Integrated drain bias inductors ► Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm) ► Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm) | AD 亚德诺 | | ||
4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm | AD 亚德诺 | | ||
4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm | AD 亚德诺 | | ||
4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm | AD 亚德诺 | | ||
43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ | AD 亚德诺 | | ||
43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ | AD 亚德诺 | | ||
43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ | AD 亚德诺 | | ||
43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ | AD 亚德诺 | | ||
50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si | AD 亚德诺 | | ||
50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si | AD 亚德诺 | | ||
50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si | AD 亚德诺 | | ||
GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai | AD 亚德诺 | | ||
GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai | AD 亚德诺 | | ||
GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai | AD 亚德诺 | | ||
GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai | AD 亚德诺 | | ||
Evaluating the ADPA7005 18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm 1>(>1 W), MMIC Power Amplifier GENERAL DESCRIPTION The ADPA7005-EVALZ consists of a two-layer printed circuit board (PCB) fabricated from a 10 mil thick, Rogers 4350B, copper clad mounted to an aluminum heat sink. The heat sink assists in providing thermal relief to the device as well as mechanical support to the PCB. Mounting | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5 | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5 | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5 | AD 亚德诺 | | ||
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5 | AD 亚德诺 | | ||
DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier FEATURES ► Wideband, internally-matched, RF power amplifier ► DC-coupled input and output ► Integrated RF power detector ► Integrated temperature sensor ► Gain: 12.5 dB typical at 2 GHz to 16 GHz ► OP1dB: 33 dBm typical at 2 GHz to 16 GHz ► PSAT: 34 dBm typical at 2 GHz to 16 GHz ► OIP3: 4 | AD 亚德诺 | | ||
DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier FEATURES ► Wideband, internally matched, RF power amplifier ► DC-coupled input and output ► Integrated RF power detector ► Integrated temperature sensor ► Gain: 13 dB typical at 8 GHz to 16 GHz ► OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz ► PSAT: 33.5 dBm typical at 8 GHz to 16 GHz ► OIP3: | AD 亚德诺 | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
包装：袋 描述：SWITCH PIANO DIP SPST 25MA 24V 开关 DIP 开关 | ETC 知名厂家 | ETC | | |
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
包装：管件 描述：SWITCH PIANO DIP SPST 25MA 24V 开关 DIP 开关 | ETC 知名厂家 | ETC | | |
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | | ||
DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount 文件：171.1 Kbytes Page：4 Pages | MACOM | | ||
DIP SWITCH ASSEMBLY ADP/PA SERIES 文件：301.27 Kbytes Page：2 Pages | MACOM | |
ADPA产品属性
- 类型
描述
- 型号
ADPA
- 功能描述
SWITCH DIP PIANO 2POS PCB
- RoHS
否
- 类别
开关 >> DIP
- 系列
ADPA
- 特色产品
RDM Series Rotary DIP Switch
- 标准包装
70
- 系列
RDM
- 电路
十六进制
- 位置数
16
- 触点额定电压
0.1A @ 42VDC
- 触动器类型
用于工具旋转
- 触动器电平
凹槽式
- 安装类型
通孔
- 方向
顶部触动
- 可清洗
是
- 其它名称
EG4977-5RDMAR16PIT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI(亚德诺) |
24+ |
N/A |
6400 |
原厂直销,现货供应,账期支持! |
|||
ADI(亚德诺) |
24+ |
NA/ |
7350 |
原装进口,原厂直销!当天可交货,支持原型号开票! |
|||
ADI/亚德诺 |
2511 |
原封装 |
66900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ADI(亚德诺) |
23+ |
13620 |
公司只做原装正品,假一赔十 |
||||
ADI/亚德诺 |
26+ |
NA |
60000 |
原装正品,可BOM配单 |
|||
ADI/亚德诺 |
20+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
Analog Devices Inc. |
25+ |
14-CLCC |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ADI/亚德诺 |
23+ |
TRAY |
3000 |
只做原装正品,假一赔十 |
|||
ADI/亚德诺 |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
|||
ADI/亚德诺 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
ADPA规格书下载地址
ADPA参数引脚图相关
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- an983b
- an158
- ams1117
- amp连接器
- amoled
- altobeam
- aj1
- ads1115
- ADQ-90
- ADQ-32W
- ADQ-32
- ADQ-22
- ADQ-180
- ADP-Z
- ADP-Y
- ADP-X
- ADP-W6
- ADP-W5
- ADP-W3
- ADPT1
- ADP-SMAM-RPSF
- ADP-SMAF-SMAF
- AD-PS2-KM
- ADP-RPSM-SMAF
- ADPRF
- ADP-R5
- ADPPS
- ADPLP01
- ADPL75-E1-UBJ20
- ADPL75-A1-PL75
- ADPL375-E1UBJ20
- ADP-I2C-USB-Z
- ADP-G2
- ADPFF3J04AY
- ADPDC2W04AC
- ADPDC2T04AC
- ADPDC2P04AC
- ADPDC2L04AC
- ADPDC2J04AY
- ADPDC2J04AC
- ADPDC2A04AC
- ADPD107
- ADPD106
- ADPD105
- ADPD103
- ADPA0804
- ADPA08
- ADPA04S04
- ADP91420F
- ADP8870
- ADP8866CP-EVALZ
- ADP8866ACPZ-R7
- ADP8866
- ADP8863ACPZ-R7
- ADP8863
- ADP8861DBCB-EVALZ
- ADP8861ACBZ-R7
- ADP8861
- ADP8860ACPZ-R7
- ADP8860ACBZ-R7
- ADP8860
- ADP-84PGA/PLCC
- ADP8140ACPZ-2-R7
- ADP8140ACPZ-1-R7
- ADP7183
- ADP7182UJ-EVALZ
- ADP7182AUJZ-R7
- ADP7182AUJZ-2.5-R7
- ADP7182ACPZ-R7
- ADP7182ACPZ-5.0-R7
- ADP7182
- ADP716
- ADP7159
- ADP7158
- ADP7157
- ADP7156
- ADP7142UJ-EVALZ
- ADP7142RD-EVALZ
- ADP7142CP-EVALZ
- ADP7118
- ADP7105
- ADP7104
- ADP7102
- ADP672
- ADP671
- ADP670
- ADP667
- ADP5600
ADPA数据表相关新闻
ADR02BKSZ-REEL7
进口代理
2022-8-2ADP7182AUJZ-R7
深圳市亿建盛电子有限公司是一家专业化的，综合性的电子元器件独立分销商。支持小订单，稳定可靠，专业服务，为我们的经营理念。我们承诺只有原厂原装正品货，所有货品都来自正规渠道。
2021-9-1ADP7182AUJZ-R7
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2020-9-7ADR01BKSZ-REEL7 只做原装 专营ADI
国产代理，原装进口，货源渠道百分百正品，每一片芯片都可追溯至原厂。
2020-6-6ADP7182AUJZ-5.0中文资料参数ADP7182AUJZ-5.0商品描述
ADP7182AUJZ-5.0中文资料参数ADP7182AUJZ-5.0商品描述
2020-6-5ADR02BRZ
AD8216YRZ ADI 19+ 5000 AD834JR ADI 19+ 5000 M25P80 ADI 19+ 5000 OP07CSZ-REEL ADI 19+ 5000 OP284ESZ ADI 19+ 5000 REF198GSZ ADI 19+ 5000 AD8012AR ADI 19+ 5000 ADR292FRZ ADI 19+ 5000 DAC8043AESZ ADI 19+ 5000 AD8099ARDZ ADI 19+ 5000 AD8512AR ADI 19+ 5000 AD8628 ADI 19+ 5000 AD8130ARZ-REEL7 A
2019-8-21
DdatasheetPDF页码索引
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