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位置：首页 > IC中文资料第4790页 > ADPA

ADPA价格

参考价格：￥5.4581

型号：ADPA04S04 品牌：TEConnectivity/Alcoswitc 备注：这里有ADPA多少钱，2026年最近7天走势，今日出价，今日竞价，ADPA批发/采购报价，ADPA行情走势销售排行榜，ADPA报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ADPA1106

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier

GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.

AD

亚德诺

ADPA1106ACGZN

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier

GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.

AD

亚德诺

ADPA1106ACGZN-R7

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier

GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.

AD

亚德诺

ADPA1106-EVALZ

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier

GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.

AD

亚德诺

ADPA1112

1GHz to 22GHz, 15W, GaN Power Amplifier

FEATURES ► Frequency range: 1GHz to 22GHz ► 50Ω matched input and output ► Power gain: 14dB typical from 8GHz to 16GHz ► POUT: 42dBm typical from 8GHz to 16GHz ► PAE: 25% typical from 8GHz to 16GHz ► S21: 20.5dB typical from 8GHz to 16GHz ► OIP3: 44dBm typical from 8GHz to 16GHz ► Inte

AD

亚德诺

ADPA1112AEJZ

1GHz to 22GHz, 15W, GaN Power Amplifier

FEATURES ► Frequency range: 1GHz to 22GHz ► 50Ω matched input and output ► Power gain: 14dB typical from 8GHz to 16GHz ► POUT: 42dBm typical from 8GHz to 16GHz ► PAE: 25% typical from 8GHz to 16GHz ► S21: 20.5dB typical from 8GHz to 16GHz ► OIP3: 44dBm typical from 8GHz to 16GHz ► Inte

AD

亚德诺

ADPA1112AEJZ-50

1GHz to 22GHz, 15W, GaN Power Amplifier

FEATURES ► Frequency range: 1GHz to 22GHz ► 50Ω matched input and output ► Power gain: 14dB typical from 8GHz to 16GHz ► POUT: 42dBm typical from 8GHz to 16GHz ► PAE: 25% typical from 8GHz to 16GHz ► S21: 20.5dB typical from 8GHz to 16GHz ► OIP3: 44dBm typical from 8GHz to 16GHz ► Inte

AD

亚德诺

ADPA1113

2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 40 W, GaN power amplifier ► Integrated drain bias inductor ► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz ► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21

AD

亚德诺

ADPA1113AEJZ

2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 40 W, GaN power amplifier ► Integrated drain bias inductor ► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz ► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21

AD

亚德诺

ADPA1113-EVALZ

2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 40 W, GaN power amplifier ► Integrated drain bias inductor ► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz ► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21

AD

亚德诺

ADPA1116

0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

FEATURES ► Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier ► RF input and RF output AC-coupled ► Integrated drain bias inductors ► Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm) ► Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)

AD

亚德诺

ADPA1120

4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm

AD

亚德诺

ADPA1120ACPZN

4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm

AD

亚德诺

ADPA1120ACPZN-R7

4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm

AD

亚德诺

ADPA1122

43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

AD

亚德诺

ADPA1122AEHZ

43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

AD

亚德诺

ADPA1122AEHZ-R7

43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

AD

亚德诺

ADPA1122-EVALZ

43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

AD

亚德诺

ADPA7001CHIPS

50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier

FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si

AD

亚德诺

ADPA7001CHIPS_V01

50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier

FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si

AD

亚德诺

ADPA7001CHIPS-SX

50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier

FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si

AD

亚德诺

ADPA7002

GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier

FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai

AD

亚德诺

ADPA7002AEHZ

GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier

FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai

AD

亚德诺

ADPA7002AEHZ-R7

GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier

FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai

AD

亚德诺

ADPA7002-EVALZ

GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier

FEATURES ► Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) ► PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz) ► Gain: 15 dB (typical at 34 GHz to 44 GHz) ► IP3: 38 dBm (typical) ► Integrated power detector ► Supply voltage: 5 V at 700 mA ► 16-terminal, 6 mm × 6 mm, ceramic, high frequency, ai

AD

亚德诺

ADPA7005

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm 1>(>1 W), MMIC Power Amplifier

FEATURES ► Output P1dB: up to 31 dBm typical ► PSAT: up to 32 dBm typical ► Gain: up to 15.5 dB typical ► Output IP3: up to 42.5 dBm typical ► Supply voltage: 5 V at 1400 mA ► 50 Ω matched input and output ► 18-terminal, 7 mm × 7 mm LCC_HS package ► Integrated power detector APPLICATION

AD

亚德诺

ADPA7005AEHZ

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm 1>(>1 W), MMIC Power Amplifier

FEATURES ► Output P1dB: up to 31 dBm typical ► PSAT: up to 32 dBm typical ► Gain: up to 15.5 dB typical ► Output IP3: up to 42.5 dBm typical ► Supply voltage: 5 V at 1400 mA ► 50 Ω matched input and output ► 18-terminal, 7 mm × 7 mm LCC_HS package ► Integrated power detector APPLICATION

AD

亚德诺

ADPA7005AEHZ-R7

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm 1>(>1 W), MMIC Power Amplifier

FEATURES ► Output P1dB: up to 31 dBm typical ► PSAT: up to 32 dBm typical ► Gain: up to 15.5 dB typical ► Output IP3: up to 42.5 dBm typical ► Supply voltage: 5 V at 1400 mA ► 50 Ω matched input and output ► 18-terminal, 7 mm × 7 mm LCC_HS package ► Integrated power detector APPLICATION

AD

亚德诺

ADPA7005-EVALZ

Evaluating the ADPA7005 18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm 1>(>1 W), MMIC Power Amplifier

GENERAL DESCRIPTION The ADPA7005-EVALZ consists of a two-layer printed circuit board (PCB) fabricated from a 10 mil thick, Rogers 4350B, copper clad mounted to an aluminum heat sink. The heat sink assists in providing thermal relief to the device as well as mechanical support to the PCB. Mounting

AD

亚德诺

ADPA7005-EVALZ

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm 1>(>1 W), MMIC Power Amplifier

FEATURES ► Output P1dB: up to 31 dBm typical ► PSAT: up to 32 dBm typical ► Gain: up to 15.5 dB typical ► Output IP3: up to 42.5 dBm typical ► Supply voltage: 5 V at 1400 mA ► 50 Ω matched input and output ► 18-terminal, 7 mm × 7 mm LCC_HS package ► Integrated power detector APPLICATION

AD

亚德诺

ADPA7008

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

AD

亚德诺

ADPA7008AEHZ

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

AD

亚德诺

ADPA7008AEHZ-R7

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

AD

亚德诺

ADPA7008-EVALZ

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

AD

亚德诺

ADPA7009-2

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5

AD

亚德诺

ADPA7009-2ACEZ

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5

AD

亚德诺

ADPA7009-2ACEZ-R7

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5

AD

亚德诺

ADPA7009-2-EVALZ

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 5

AD

亚德诺

ADPA9007

DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

FEATURES ► Wideband, internally-matched, RF power amplifier ► DC-coupled input and output ► Integrated RF power detector ► Integrated temperature sensor ► Gain: 12.5 dB typical at 2 GHz to 16 GHz ► OP1dB: 33 dBm typical at 2 GHz to 16 GHz ► PSAT: 34 dBm typical at 2 GHz to 16 GHz ► OIP3: 4

AD

亚德诺

ADPA9007-2

DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

FEATURES ► Wideband, internally matched, RF power amplifier ► DC-coupled input and output ► Integrated RF power detector ► Integrated temperature sensor ► Gain: 13 dB typical at 8 GHz to 16 GHz ► OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz ► PSAT: 33.5 dBm typical at 8 GHz to 16 GHz ► OIP3:

AD

亚德诺

ADPA02

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA0204

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA02S

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA02S

包装：袋 描述：SWITCH PIANO DIP SPST 25MA 24V 开关 DIP 开关

ETC

知名厂家

ADPA02S04

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA02SA

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA02SA04

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA04

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA04

包装：管件 描述：SWITCH PIANO DIP SPST 25MA 24V 开关 DIP 开关

ETC

知名厂家

ADPA0404

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA04S

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA04S04

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA04SA

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA04SA04

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA05

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA05

拨码开关

TECHSPRAY

ADPA0504

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA05S

拨码开关

TECHSPRAY

ADPA05S

DIP Switches, Extended Actuator, Auto Insertable, Through Hole and Surface Mount

文件：171.1 Kbytes Page：4 Pages

MACOM

ADPA05S04

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

MACOM

ADPA产品属性

  • 类型

    描述

  • 型号

    ADPA

  • 功能描述

    SWITCH DIP PIANO 2POS PCB

  • RoHS

    否

  • 类别

    开关 >> DIP

  • 系列

    ADPA

  • 特色产品

    RDM Series Rotary DIP Switch

  • 标准包装

    70

  • 系列

    RDM

  • 电路

    十六进制

  • 位置数

    16

  • 触点额定电压

    0.1A @ 42VDC

  • 触动器类型

    用于工具旋转

  • 触动器电平

    凹槽式

  • 安装类型

    通孔

  • 方向

    顶部触动

  • 可清洗

    是

  • 其它名称

    EG4977-5RDMAR16PIT

ADPA供应商更多...

更新时间：2026-5-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
ADPA1106-EVALZ
ADI(亚德诺)
25+
N/A
7734
样件支持,可原厂排单订货!
询价
深圳市得捷芯城科技有限公司
ADPA1106-EVALZ
ADI(亚德诺)
25+
N/A
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市科恒伟业电子有限公司
ADP02STR04
TE CONNECTIVITY美国泰科
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
询价
深圳市华睿芯科技有限公司
ADP03BUT-REEL7
24+
SOT
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市星辰微电科技有限公司
ADPA1106
ADI
25+
32-Lead LFCSP (5mm x 5mm w/ EP
5500
46 dBm (40 W)、2.7 GHz至3.5 GHz GaN功率放大器
询价
深圳市昌和盛利电子有限公司
ADP03G
AD
26+
SMD
9827
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
询价
标准国际(香港)有限公司
ADP02
ALCO
25+
43
公司优势库存 热卖中!
询价
深圳阅创想电子实业有限公司
ADP0204
TE/泰科
24+
11609
原厂现货渠道
询价
深圳市中联芯电子有限公司
ADPA1106ACGZN
ADI/亚德诺
25+
TRAY
3000
只做原装正品,假一赔十
询价
深圳市壹芯创科技有限公司
ADP000H6
FCI
22+
原厂原封
8200
全新原装现货!自家库存!
询价

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ADPA规格书下载地址

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