FEATURES

► Internally matched and AC-coupled, 40 W, GaN power amplifier

► Integrated drain bias inductor

► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)

► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz

► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21

dBm)

► PAE: 39 typical from 2.3 GHz to 5.7 GHz

► VDD = 28 V at IDQ = 750 mA

► 14-lead ceramic leaded chip carrier [LDCC] with a copper-molybdenum

base

APPLICATIONS

► Military jammers

► Commercial and military radars

► Test and measurement equipment

GENERAL DESCRIPTION

The ADPA1113 is a gallium nitride (GaN), broadband power amplifier

delivering 46.5 dBm (44.7 W) with 39.0 power added efficiency

(PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling

are required to achieve full-band operation. Additionally, no

external inductor is required to bias the amplifier.

The ADPA1113 is ideal for continuous wave applications, such as

military jammers and radars.