Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

GENERAL DESCRIPTION The ADM803/ADM809/ADM810 supervisory circuits monitor the power supply voltage in microprocessor systems. They provide a reset output during power-up, power-down, and brownout conditions. On power-up, an internal timer holds reset asserted for 240 ms. This holds the microproce

Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

GENERAL DESCRIPTION The ADM803/ADM809/ADM810 supervisory circuits monitor the power supply voltage in microprocessor systems. They provide a reset output during power-up, power-down, and brownout conditions. On power-up, an internal timer holds reset asserted for 240 ms. This holds the microproce

Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

文件：309.61 Kbytes Page：12 Pages

Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

文件：212.77 Kbytes Page：11 Pages

Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

文件：212.77 Kbytes Page：11 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SUPERVISOR 1 CHANNEL SC70-3 集成电路（IC） 监控器

Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

文件：309.61 Kbytes Page：12 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SUPERVISOR 1 CHANNEL SC70-3 集成电路（IC） 监控器

Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

文件：212.77 Kbytes Page：11 Pages

Microprocessor Supervisory Circuits in 3-Lead SC70 and SOT-23

文件：309.61 Kbytes Page：12 Pages

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors