High Speed, 5 V, 0.1 uF CMOS RS-232 Driver/Receivers

GENERAL DESCRIPTION The ADM202 is a 2-channel RS-232 line driver/receiver pair designed to operate from a single 5 V power supply. A highly efficient on-chip charge pump design permits RS-232 levels to be developed using charge pump capacitors as small as 0.1 µF. This converter generates ±10 V RS

High-Speed, 5 V, 0.1
F CMOS RS-232 Driver/Receivers

GENERAL DESCRIPTION The ADM202 is a 2-channel RS-232 line driver/receiver pair designed to operate from a single 5 V power supply. A highly efficient on-chip charge pump design permits RS-232 levels to be developed using charge pump capacitors as small as 0.1 µF. This converter generates ±10 V RS

High-Speed, 5 V, 0.1 \u0001F CMOS RS-232 Driver/Receivers

GENERAL DESCRIPTION\nThe ADM202/ADM203 is a two-channel RS-232 line driver/receiver pair designed to operate from a single 5 V power supply. A highly efficient on-chip charge pump design permits RS-232 levels to be developed using charge pump capacitors as small as 0.1 µF. The capacitors are interna   120 kB Transmission Rate\n  ADM202: Small (0.1 μF) Charge Pump Capacitors\n  ADM203: No External Capacitors Required\n  Single 5 V Power Supply\n  Meets EIA-232-E and V.28 Specifications\n  Two Drivers and Two Receivers\n  On-Board DC-DC Converters\n  ±9 V Output Swing with 5 V Supply\n  Low Power;

High-Speed, 5 V, 0.1 uF CMOS RS-232 Driver/Receivers

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P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.