N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04Q uses advanced trench technology and design to provide excellent RDS(ON) wit

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04 series MOSFETs is a new technology, which combines an innovative super junct

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04G series MOSFETs is a new technology, which combines an innovative super junc

N-Channel Power MOSFET N-Kanal Leistungs-MOSFET

Features Low profile, space saving package Standard Level Gate Driver Low on state resistance Fast switching times Low gate charge Avalanche rated Compliant to RoHS (exemp. 7a) REACH, Conflict Minerals 1)

N-Channel Enhancement Mode Power Mosfet

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