10 MHz to 8 GHz Bypass Amplifier

FEATURES ► Small signal gain of 12.5 dB typical from 10 MHz to 500 MHz ► Broad operation from 10 MHz to 8000 MHz ► OIP3 of 34 dBm typical from 10 MHz to 500 MHz ► Internal amplifier state, output P1dB of 17 dBm typical from 5000 MHz to 8000 MHz ► Noise figure of 2.8 dB typical from 10 MHz to

10 MHz 至 8000 MHz 旁路放大器

ADL8111 是一款具有非反射旁路开关的低噪声放大器 (LNA)，可在 10 MHz 至 8000 MHz 的宽频率范围内工作。ADL8111 同时提供 2.8 dB 的低噪声指数和 34 dBm 的高输出三阶交调点 (OIP3)，可实现高动态范围。ADL8111 提供 12.5 dB 的增益，该增益可在不同频率、温度、电源下以及在不同套件之间保持稳定。\n\n 由于集成了一个放大器和两个单刀四掷 (SP4T) 非反射开关，因此可实现多个增益和线性度值。开关的添加还可实现高输入交调点性能，并可在高信号电平应用中避免失真。\n\n ADL8111 具有 ±750 V 的高静 • 10 MHz 至 500 MHz 时具有 12.5 dB 的小信号增益（典型值）\n• 10 MHz 至 8000 MHz 的宽工作频率范围\n• 10 MHz 至 500 MHz 时 OIP3 为 34 dBm（典型值）\n• 内部放大器状态，5000 MHz 至 8000 MHz 时输出 P1dB 为 17 dBm（典型值）\n• 10 MHz 至 500 MHz 时噪声指数为 2.8 dB（典型值）;

Bypass Amplifier

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10 MHz to 8 GHz Bypass Amplifier

FEATURES ► Small signal gain of 12.5 dB typical from 10 MHz to 500 MHz ► Broad operation from 10 MHz to 8000 MHz ► OIP3 of 34 dBm typical from 10 MHz to 500 MHz ► Internal amplifier state, output P1dB of 17 dBm typical from 5000 MHz to 8000 MHz ► Noise figure of 2.8 dB typical from 10 MHz to

10 MHz to 8 GHz Bypass Amplifier

FEATURES ► Small signal gain of 12.5 dB typical from 10 MHz to 500 MHz ► Broad operation from 10 MHz to 8000 MHz ► OIP3 of 34 dBm typical from 10 MHz to 500 MHz ► Internal amplifier state, output P1dB of 17 dBm typical from 5000 MHz to 8000 MHz ► Noise figure of 2.8 dB typical from 10 MHz to

10 MHz to 8 GHz Bypass Amplifier

FEATURES ► Small signal gain of 12.5 dB typical from 10 MHz to 500 MHz ► Broad operation from 10 MHz to 8000 MHz ► OIP3 of 34 dBm typical from 10 MHz to 500 MHz ► Internal amplifier state, output P1dB of 17 dBm typical from 5000 MHz to 8000 MHz ► Noise figure of 2.8 dB typical from 10 MHz to

10 MHz to 8 GHz Bypass Amplifier

FEATURES ► Small signal gain of 12.5 dB typical from 10 MHz to 500 MHz ► Broad operation from 10 MHz to 8000 MHz ► OIP3 of 34 dBm typical from 10 MHz to 500 MHz ► Internal amplifier state, output P1dB of 17 dBm typical from 5000 MHz to 8000 MHz ► Noise figure of 2.8 dB typical from 10 MHz to

Bypass Amplifier

文件：799.06 Kbytes Page：24 Pages

Bypass Amplifier

文件：799.06 Kbytes Page：24 Pages

封装/外壳：28-LFLGA 裸露焊盘 包装：托盘 描述：28-LGA-6X6_MM MODULE/SIP RF/IF，射频/中频和 RFID 射频放大器

包装：散装 描述：ADL8111 EVAL BOARD 开发板，套件，编程器 射频评估和开发套件，开发板

Bypass Amplifier

文件：799.06 Kbytes Page：24 Pages

260 MHz, 16 x 8 Buffered Video Crosspoint Switches

PRODUCT DESCRIPTION The AD8110 and AD8111 are high speed 16 × 8 video cross-point switch matrices. They offer a –3 dB signal bandwidth greater than 260 MHz, and channel switch times of less than 25 ns with 1 settling. With –78 dB of crosstalk and –97 dB isolation (@ 5 MHz), the AD8110/AD8111 are

8mm VTR Sensor Amplifier

Overview The LB8111V is equipped with built-in amplifiers for use with reel FG, drum FG and drum PG applications to make this IC most suitable for portable VCR (Video Cassette Recorder) applications. Features • Built-in 2-channel reed FG amplifier. • Built-in drum FG amplifier. • Built-i

8mm VTR Sensor Amplifier

Overview The LB8111V is equipped with built-in amplifiers for use with reel FG, drum FG and drum PG applications to make this IC most suitable for portable VCR (Video Cassette Recorder) applications. Features • Built-in 2-channel reed FG amplifier. • Built-in drum FG amplifier. • Built-i

6-Pin DIP Optoisolators Transistor Output(No Base Connection)

6-Pin DIP Optoisolators Transistor Output(No Base Connection) The MOC8111, MOC8112 and MOC8113 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. The internal base–to–Pin 6 connection has been eliminated for improved n

PHOTOTRANSISTOR OPTOCOUPLERS

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