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型号	功能描述	生产厂家企业	LOGO
ADL8106	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz	AD 亚德诺	AD
ADL8106	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for ope	AD 亚德诺	AD
ADL8106	GaAs pHEMT 低噪声放大器，20 GHz 至 54 GHz	AD 亚德诺	AD
ADL8106_V01	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz	AD 亚德诺	AD
ADL8106ACEZ	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for ope	AD 亚德诺	AD
ADL8106ACEZ	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz	AD 亚德诺	AD
ADL8106ACEZ-R7	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz	AD 亚德诺	AD
ADL8106ACEZ-R7	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for ope	AD 亚德诺	AD
ADL8106CHIPS	GaAs, pHEMT, Low Noise Amplifier, 20 GHz to 54 GHz GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1	AD 亚德诺	AD
ADL8106CHIPS-SX	GaAs, pHEMT, Low Noise Amplifier, 20 GHz to 54 GHz GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1	AD 亚德诺	AD
ADL8106-EVALZ	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz	AD 亚德诺	AD
ADL8106-EVALZ	GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for ope	AD 亚德诺	AD
ADL8106-EVALZ	包装：盒描述：ADL8106 EVAL BOARD 开发板，套件，编程器射频评估和开发套件，开发板	AD 亚德诺	AD
8106	RS232/422 Low Cap, #24-6pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.	BELDEN 百通	BELDEN
8106	METAL CABLE CLAMPS 文件：279.99 Kbytes Page：1 Pages	KEYSTONE Keystone Electronics Corp.	KEYSTONE
8106	MARC REMOVABLE PIN SOCKET CONTACTS 文件：393.44 Kbytes Page：1 Pages	Winchester 温彻斯特	Winchester
8106	Low Capacitance for EIA RS-232 and EIA RS-422 Applications 文件：365.47 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
8106	Tsunami Detection System 文件：161.75 Kbytes Page：2 Pages	SONARDYNE	SONARDYNE

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更新时间：2025-12-25 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	ADL8107ACPZN	ADI(亚德诺)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市创新迹电子有限公司	ADL8111ACCZN	ADI/亚德诺	22+	N/A	20000	公司只做原装品质保障	询价
深圳市诺美思科技有限公司	ADL8111ACCZN	ADI		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市高捷芯城科技有限公司	ADL8107ACPZN	ADI(亚德诺)	24+	NA/	7350	原装进口,原厂直销!当天可交货,支持原型号开票!	询价
深圳市煦洪科技有限公司	ADL8108ACPZN-R7	ADI/亚德诺	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
中天科工半导体（深圳）有限公司	ADL8111ACCZN	ADI/亚德诺	20+	28ldLGA(6mmx6mmw4EP)	33680	ADI全新原装-可开原型号增税票	询价
深圳市明嘉莱科技有限公司	ADL8106ACEZ	ADI	25+	NV	2025424	明嘉莱只做原装正品现货	询价
贸泽芯城（深圳）电子科技有限公司	ADL8111ACCZN	ANALOGDEVICES	23+		5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市云美电子科技有限公司	ADL8106ACEZ	ADI	25+	LFCSP	7760	郑重承诺只做原装进口现货	询价
深圳市中飞凌科技有限公司	ADL8111ACCZN	ADI/亚德诺	26+	NA	60000	原装正品,可BOM配单	询价

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ADL8107ACPZN
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ADM1014-双PCI热PlugTM控制器
ADM1014是一个双PCI电压总线控制器，允许适配卡的热插拔主动或被动的流入和流出背板。该装置只需要4个外部电源一个完整的MOSFET和几个分立元件两个PCI插槽的电源控制解决方案。ADM1014经营从+12 V和+3.3 V辅助电源和控制五个独立的用品，（3.3伏，3.3 VAUX+5 V，+12 V和- 12V）两个独立的通道（A和B）。+3.3 VAUX，12 V和- 12V电源开关供应集成到芯片上，内部电流限制提供。对于+3.3 V和+5 V电源，设备驱动外部N沟道功率MOSFET，通过感应的电压降提供过流保护在外部电流检测电阻。所有10个电源电流限制是由单个电阻设置至GND，连接到
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ADL8106规格书下载地址

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DdatasheetPDF页码索引