位置:ADL8106ACEZ-R7 > ADL8106ACEZ-R7详情

ADL8106ACEZ-R7中文资料

厂家型号

ADL8106ACEZ-R7

文件大小

1917.38Kbytes

页面数量

26

功能描述

GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AD

ADL8106ACEZ-R7数据手册规格书PDF详情

GENERAL DESCRIPTION

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transfer (pHEMT), monolithic microwave integrated

circuit (MMIC), wideband low noise amplifier that operates from

18 GHz to 54 GHz. All the typically required external passive

components for operation (ac coupling capacitors and power supply

decoupling capacitors) are integrated, which facilitates a small and

compact printed circuit board (PCB) footprint.

The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB

compression (OP1dB) of 14.5 dBm, and a typical output third-order

intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106

requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106

is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small

outline no lead cavity (LGA_CAV) package.

FEATURES

► Integrated power supply capacitors and bias inductors

► Integrated ac-coupling capacitors

► Gain: 21.5 dB typical at 30 GHz to 44 GHz

► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz

► Output return loss: 19 dB typical at 30 GHz to 44 GHz

► OP1dB: 14.5 dB typical at 30 GHz to 44 GHz

► PSAT: 19 dBm typical at 30 GHz to 44 GHz

► OIP3: 21.5 dBm typical at 30 GHz to 44 GHz

► Noise figure: 3.5 dB typical at 30 GHz to 44 GHz

► 3 V typical supply voltage at 120 mA

► 50 Ω matched input and output

► 24-terminal, 5.00 mm × 5.00 mm, chip array small outline no lead cavity [LGA_CAV]

APPLICATIONS

► Test instrumentation

► Military and space

更新时间:2025-12-1 9:31:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ADI(亚德诺)
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ADI(亚德诺)/LINEAR
2021+
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25+
LGA-28
8880
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ADI/亚德诺
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20000
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