Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65V to 2.75V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65V to 2.75V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65V to 2.75V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability

1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER

The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.