1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3 Ω、CMOS、1.8 V至5.5 V、单通道单刀双掷开关/2:1多路复用器，采用SOT-66封装

ADG859是一款单芯片CMOS单刀双掷（SPDT）开关，采用1.8 V至5.5 V电源供电。在整个工作温度范围（−40°C至+125°C）内，它具有低导通电阻，最大值为2.3 Ω。该器件还能够载送大量电流；采用5 V电源供电时，载流能力典型值为300 mA。这些特性使得ADG859非常适合空间受限的应用，例如手机、PDA和MP3播放器等。\n\n接通时，各开关在两个方向的导电性能相同。该器件为先开后合式，从而可防止开关通道时发生瞬时短路。        \n\nADG859采用6引脚小型SOT-66封装。\n\n产品聚焦• 低导通电阻：在整个工作温度范围（−40°C至+125°C）内，最大值 • 单电源：1.8 V至5.5 V\n\n• 小型1.65 mm × 1.65 mm封装\n\n• 高载流能力: 300 mA连续电流500mA 峰值电流(5 V)\n\n\n\n• 低导通电阻：1.3 Ω (5 V)\n\n• 轨到轨工作\n\n• 典型功耗：;

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

Switch/2:1 MUX in SOT-66 Package

文件：393.52 Kbytes Page：16 Pages

封装/外壳：SOT-66 包装：卷带（TR）卷带（TR）卷带（TR） 描述：IC SWITCH SPDT SOT66 集成电路（IC） 模拟开关，多路复用器，解复用器

封装/外壳：SOT-66 包装：卷带（TR）卷带（TR）卷带（TR） 描述：IC SWITCH SPDT SOT66 集成电路（IC） 模拟开关，多路复用器，解复用器

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment.

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

Description: The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational amplifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low harmonic distortion and low noise make these devices ideally suited as amplifiers for high–

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages