1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3 Ω、CMOS、1.8 V至5.5 V、单通道单刀双掷开关/2:1多路复用器，采用SOT-66封装

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package

GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of

Switch/2:1 MUX in SOT-66 Package

文件：393.52 Kbytes Page：16 Pages

封装/外壳：SOT-66 包装：卷带（TR）卷带（TR）卷带（TR） 描述：IC SWITCH SPDT SOT66 集成电路（IC） 模拟开关，多路复用器，解复用器

封装/外壳：SOT-66 包装：卷带（TR）卷带（TR）卷带（TR） 描述：IC SWITCH SPDT SOT66 集成电路（IC） 模拟开关，多路复用器，解复用器

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment.

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

Description: The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational amplifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low harmonic distortion and low noise make these devices ideally suited as amplifiers for high–

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages