0.28 OHM CMOS 1.65 V to 3.6 V Single SPST Switches in SC70

GENERAL DESCRIPTION The ADG841 and ADG842 are low voltage CMOS devices containing a single-pole, single-throw (SPST) switch. The ADG841 is closed for a Logic 1 input and the ADG842 is open for a Logic 1 input. The devices offer ultralow on resistance of less than 0.48 Ω over the full temperature

0.28 Ω、CMOS、1.65 V至3.6 V、单通道单刀单掷开关，采用SC70封装，输入为逻辑1时闭合

ADG841和ADG842均为低压CMOS器件，内置一个单刀单掷(SPST)开关。输入为逻辑1时，ADG841闭合，ADG842则断开。在整个温度范围内，这些器件具有小于0.48 Ω的超低导通电阻。额定电源电压为3.3 V、2.5 V和1.8 V。\n\n接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。ADG841/ADG842均为先开后合式开关。\n\n ADG841/ADG842采用6引脚SC70封装。 • 超低导通电阻\n0.28 Ω（典型值）\n0.48 Ω（最大值，125°C）\n\n• 出色的音频性能、超低失真 \n0.025 Ω（典型值）\n0.052 Ω（最大值，导通电阻RON平坦度）\n\n• 单电源：1.65 V至3.6 V\n\n• 单电源：1.65 V至3.6 V;

0.28 OHM CMOS 1.65 V to 3.6 V Single SPST Switches in SC70

GENERAL DESCRIPTION The ADG841 and ADG842 are low voltage CMOS devices containing a single-pole, single-throw (SPST) switch. The ADG841 is closed for a Logic 1 input and the ADG842 is open for a Logic 1 input. The devices offer ultralow on resistance of less than 0.48 Ω over the full temperature

0.28 OHM CMOS 1.65 V to 3.6 V Single SPST Switches in SC70

GENERAL DESCRIPTION The ADG841 and ADG842 are low voltage CMOS devices containing a single-pole, single-throw (SPST) switch. The ADG841 is closed for a Logic 1 input and the ADG842 is open for a Logic 1 input. The devices offer ultralow on resistance of less than 0.48 Ω over the full temperature

0.28 OHM CMOS 1.65 V to 3.6 V Single SPST Switches in SC70

GENERAL DESCRIPTION The ADG841 and ADG842 are low voltage CMOS devices containing a single-pole, single-throw (SPST) switch. The ADG841 is closed for a Logic 1 input and the ADG842 is open for a Logic 1 input. The devices offer ultralow on resistance of less than 0.48 Ω over the full temperature

Single SPST Switches in SC70

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N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

TO-220 8A Triac

文件：58.07 Kbytes Page：2 Pages