0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 Ω、CMOS、1.65 V至3.6 V、双通道单刀双掷开关/2:1多路复用器

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

文件：563.59 Kbytes Page：16 Pages

0.5 Ω、CMOS、1.65 V至3.6 V、双通道单刀双掷开关/2:1多路复用器，保证泄漏性能

CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

文件：419.06 Kbytes Page：16 Pages

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Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

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