0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 Ω、CMOS、1.65 V至3.6 V、双通道单刀双掷开关/2:1多路复用器

ADG836是一款低压CMOS器件，内置两个独立可选的单刀双掷(SPDT)开关。在整个温度范围内，该器件具有小于0.8 Ω的超低导通电阻。额定电源电压为3.3 V、2.5 V和1.8 V。\n\n 接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。ADG836为先开后合式开关。\n\n ADG836提供10引脚MSOP和3 mm x 3 mm、12引脚LFCSP两种封装。 \n\n产品聚焦 在整个工作温度范围（–40°C至+125°C）内，导通电阻小于0.8 Ω。 1.65 V至3.6 V单电源供电。 与1.8 V CMOS逻辑兼 • 导通电阻：0.5 Ω（典型值）\n\n• 导通电阻：0.8 Ω（最大值，125°C）\n\n• 工作电压：1.65 V至3.6 V\n\n• 汽车应用温度范围：–40°C至+125°C\n\n• 高载流能力：300 mA连续\n\n• 轨到轨开关工作\n\n• 快速开关时间：< 20 ns\n\n• 典型功耗：<0.1 μW;

0.5 Ω、CMOS、1.65 V至3.6 V、双通道单刀双掷开关/2:1多路复用器，保证泄漏性能

ADG836L是一款低压CMOS器件，内置两个独立可选的单刀双掷(SPDT)开关。在整个温度范围内，该器件具有小于0.8 Ω的超低导通电阻。额定电源电压为3.3 V、2.5 V和1.8 V。\n\n 当接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。ADG836L为先开后合式开关。\n\n ADG836L采用10引脚封装。\n\n 产品特色\n\n 在整个工作温度范围（−40°C至+125°C）内，导通电阻小于0.8 Ω。 1.65 V至3.6 V单电源供电。 与1.8 V CMOS逻辑兼容。 高电流处理能力：30 • 导通电阻：0.5 Ω（典型值）\n\n• 导通电阻：0.8 Ω（最大值，125°C）\n\n• 汽车应用温度范围：–40°C至+125°C\n\n• 在125°C及以下可保证泄漏性能\n\n• 工作电压：1.65 V至3.6 V\n\n• 高载流能力：300 mA连续电流\n\n• 轨到轨开关工作\n\n• 快速开关时间：< 20 ns\n\n• 典型功耗：<0.1 μW;

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

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CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

文件：419.06 Kbytes Page：16 Pages

P-Channel 2.5V Specified MOSFET

General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performa

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

MicroConverter, Dual 16-Bit/24- Bit ADCs with Embedded 62 kB Flash MCU

文件：1.43798 Mbytes Page：80 Pages