0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

0.5 OHM CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V

P-Channel 2.5V Specified MOSFET

General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performa

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

MicroConverter, Dual 16-Bit/24- Bit ADCs with Embedded 62 kB Flash MCU

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