<1 Ω、低压(1.8 V - 5.5 V)、双通道单刀单掷开关

ADG821、ADG822和ADG823均为单芯片CMOS单刀单掷（SPST）开关，采用先进的亚微米工艺设计，具有低功耗、高开关速度、低导通电阻和低泄漏电流特性。 • 0.8 Ω maximum on resistance @ 125°C\n\n• 0.3 Ω maximum on resistance flatness @ 125°C\n\n• 1.8 V to 5.5 V single supply\n\n• 200 mA current carrying capability\n\n• Automotive temperature range: −40°C to +125°C\n\n• Rail-to-rail operation;

??CMOS 1.8 V to 5.5 V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit Low Voltage Audio Amplifier

Description: The NTE823 is an audio power amplifier in an 8–Lead DIP type package designed for use in low volt age consumer applications.